New Method for Silicon Sensor Charge Calibration Using Compton Scattering
arXiv:2008.11860
Abstract
In order to cope with increasing lifetime radiation damage expected at collider experiments, silicon sensors are becoming increasingly thin. To achieve adequate detection efficiency, the next generation of detectors may have to operate with thresholds below 1000 electron-hole pairs. The readout chips attached to these sensors should be calibrated to some known external charge, but there is a lack of traditional sources in this charge regime. We present a new method for absolute charge calibration based on Compton scattering. In the past, this method has been used for calibration of scintillators, but to our knowledge never for silicon detectors. Here it has been studied using a 150 micron thick planar silicon sensor on an RD53A readout integrated circuit.
13 pages, 14 figures
References in corpus (5)
- A review of advances in pixel detectors for experiments with high rate and radiation
- R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
- A method for precise charge reconstruction with pixel detectors using binary hit information
- Operational Experience with the CMS Pixel Detector
- The MAPS-based ITS Upgrade for ALICE