Stochastic Variations in Nanoscale HZO based Ferroelectric finFETs: A Synergistic Approach of READ Optimization and Hybrid Precision Mixed Signal WRITE Operation to Mitigate the Implications on DNN Applications

Abstract

This paper reports a synergistic approach of READ and WRITE optimization by deploying a high-precision digital computation unit along with a low-precision ferroelectric finFET (Fe-finFETs) based analog vector-matrix multiplication block for mitigating the impact of stochastic device variations in hafnium zirconium oxide (HZO) based Fe-finFETs.

References in corpus (1)

• A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks

Cited by in corpus (1)

• Alleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network