Response of Windowless Silicon Avalanche Photo-Diodes to Electrons in the 90-900 eV Range

Abstract

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy $E_e$, and varies from $2.147\pm 0.027$ (for $E_e=90$ eV) to $385.8\pm 3.3$ (for $E_e=900$ eV), when operating the diode at a bias of $V_{apd}=350$ V.} This is the first time silicon avalanche photo-diodes are employed to measure electrons with $E_e<1$ keV.

References in corpus (1)

• Sub-GeV Dark Matter Detection with Electron Recoils in Carbon Nanotubes

Cited by in corpus (2)

• Absolute efficiency of a two-stage microchannel plate for electrons in the 30 - 900 eV energy range
• Detection of Low-Energy Electrons with Transition-Edge Sensors