Interfacing topological insulators and ferrimagnets: Bi${}_2$Te${}_3$ and Fe${}_3$O${}_4$ heterostructures grown by molecular beam epitaxy

Abstract

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi${}_2$Te${}_3$ and Fe${}_3$O${}_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe${}_3$O${}_4$ on Bi${}_2$Te${}_3$ and Bi${}_2$Te${}_3$ on Fe${}_3$O${}_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi${}_2$Te${}_3$ on Fe${}_3$O${}_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.

accepted for publication in APL Materials

References in corpus (8)

• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
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• Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2

Cited by in corpus (2)

• Semiconductor materials stacks for quantum dot spin qubits
• Magnetic interactions of 4$f$ electrons in the topological insulator chalcogenide Bi${}_2$Se${}_3$