Study of Silicon Photomultiplier Performance at Different Temperatures

Abstract

Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $T\approx -50{}^{\circ }$C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.

arXiv commentKeywords: Silicon Photomultiplier - SiPM, Photon Detection Efficiency - PDE, Dark Count Rate - DCR, PDE temperature dependence

References in corpus (4)

• JUNO Conceptual Design Report
• Study of the breakdown voltage of SiPMs
• Characterisation of a silicon photomultiplier device for applications in liquid argon based neutrino physics and dark matter searches
• Optimization of the light intensity for Photodetectors calibration

Cited by in corpus (4)

• Scintillation detectors with silicon photomultiplier readout in a dilution refrigerator at temperatures down to 0.2 K
• A ROOT based detector geometry and event visualization system for JUNO-TAO
• Performance of plastic scintillator modules for top veto tracker at Taishan Antineutrino Observatory
• Electron transfer efficiency in liquid xenon across THGEM holes