Correlation induced emergent charge order in metallic vanadium dioxide
arXiv:2005.02957 · doi:10.1103/PhysRevB.105.035150
Abstract
Recent progress in growth and characterization of thin-film VO has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a symmetry-consistent approach to treat structural distortions and electronic correlations in epitaxial VO films under strain, and compare our design with direct experimental probes. We find strong evidence for the emergence of correlation-driven charge order deep in the metallic phase, and our results indicate that exotic phases of VO can be controlled with epitaxial stabilization.
7 pages, 3 figures
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Cited by in corpus (4)
- Electron Correlation driven Metal-Insulator transition in Strained and Disordered VO2 films
- Mechanism of the Resistivity Switching Induced by the Joule Heating in Crystalline NbO
- Electronic phase diagram of Cr-doped VO2 epitaxial films studied by in situ photoemission spectroscopy
- Ab-initio study of the energy competition between Γand K valleys in bilayer transition metal dichalcogenides