Strain induced orbital dynamics across the Metal Insulator transition in thin VO2/TiO2(001) films
arXiv:2001.03890 · doi:10.1007/s10948-019-05378-0
Abstract
VO2 is a strongly correlated material, which undergoes a reversible metal insulator transition (MIT) coupled to a structural phase transition upon heating (T= 67° C). Since its discovery the nature of the insulating state has long been debated and different solid-state mechanisms have been proposed to explain its nature: Mott-Hubbard correlation, Peierls distortion or a combination of both. Moreover, still now there is a lack of consensus on the interplay between the different degrees of freedom: charge, lattice, orbital and how they contribute to the MIT. In this manuscript we will investigate across the MIT the orbital evolution induced by a tensile strain applied to thin VO2 films. The strained films allowed to study the interplay between orbital and lattice degrees of freedom and to clarify MIT properties.
References in corpus (9)
- Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
- Orbital-assisted metal-insulator transition in VO
- The metal-insulator transitions of VO2: A band theoretical approach
- Vanadium dioxide : A Peierls-Mott insulator stable against disorder
- Sc substitution for Mg in MgB2: effects on Tc and Kohn anomaly
- Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms
- Non-equilibrium phase precursors to the insulator-metal transition in V2O3
- Mesoscopic structural phase progression in photo-excited VO2 revealed by time-resolved x-ray diffraction microscopy
- High Tc superconductivity at a critical strain and charge density in diborides