Strain induced magnetic transition in CaMnO ultra thin films
arXiv:2003.04813 · doi:10.1103/PhysRevB.102.085432
Abstract
The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO ultrathin films, epitaxially grown on SrTiO substrates, are experimentally studied and theoretically analyzed. By means of ab initio calculations, we find that, both, the high strain produced by the substrate and the presence of the free surface contribute to the stabilization of an in-plane ferromagnetic coupling, giving rise to a non-zero net magnetic moment in the ultrathin films. Coupled with this change in the magnetic order we find an insulator-metal transition triggered by the quantum confinement and the tensile epitaxial strain. Accordingly, our magnetic measurements in 3nm ultrathin films show a ferromagnetic hysteresis loop, absent in the bulk compound due to its G-type antiferromagnetic structure.
References in corpus (14)
- Antiferromagnetic spintronics
- Antiferromagnetic spintronics
- Electrical switching of an antiferromagnet
- Strain controlled oxygen vacancy formation and ordering in CaMnO
- Origin of band gaps in 3d perovskite oxides
- Giant topological Hall effect in correlated oxide thin films
- Non collinear magnetism and single ion anisotropy in multiferroic perovskites
- Inhomogeneous Magnetism in La-doped CaMnO3. (II) Mesoscopic Phase Separation due to Lattice-coupled FM Interactions
- Strain effect on electronic transport and ferromagnetic transition temperature in LaSrMnO thin films
- Induced magnetoelectric response in Pnma perovkites
- Double exchange-driven spin pairing at the (001) surface of manganites
- Exchange interactions of CaMnO3 in the bulk and at the surface
- Magnetic reconstruction at (001) CaMnO surface
- Surface- and strain-tuning of the optical dielectric function in epitaxially grown CaMnO3