Imaging the valley and orbital Hall effect in monolayer MoS2

Abstract

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS${}_2$ can be used to measure its energy-dependent valley and orbital Hall conductivity.

arXiv commentMain text: 5 pages, 4 figures. Supp. Info: 10 pages, 7 figures

References in corpus (20)

• Atomically thin MoS2: A new direct-gap semiconductor
• Double-slit photoelectron interference in strong-field ionization of the neon dimer
• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Berry Phase Effects on Electronic Properties
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Anomalous Hall effect
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley contrasting physics in graphene: magnetic moment and topological transport
• The Valley Hall Effect in MoS2 Transistors
• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
• Electrical control of the valley Hall effect in bilayer MoS2 transistors
• Intrinsic Spin and Orbital Hall Effects from Orbital Texture
• Mapping topological order in coordinate space
• Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon
• Intrinsic orbital moment and prediction of a large orbital Hall effect in the 2D transition metal dichalcogenides
• Orbital Hall Insulating Phase in Transition Metal Dichalcogenide Monolayers
• Topological Marker Currents in Chern Insulators
• Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Mapping
• Direct Observation of Valley Coupled Topological Current in MoS${}_2$
• Locality of the anomalous Hall conductivity

Cited by in corpus (14)

• Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides
• Orbital Hall effect as an alternative to valley Hall effect in gapped graphene
• Probing topological quantum matter with scanning tunnelling microscopy
• Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides
• Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach
• Dominance of extrinsic scattering mechanisms in the orbital Hall effect: graphene, transition metal dichalcogenides and topological antiferromagnets
• Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect
• Orbital magnetoelectric effect in zigzag nanoribbons of p-band systems
• Extrinsic Orbital Hall Effect: Orbital Skew Scattering and Crossover Between Diffusive and Intrinsic Orbital Transport
• Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator
• Quantum correction to the orbital Hall effect
• Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime
• Comparing the Extrinsic Orbital Hall Effect in Centrosymmetric and Noncentrosymmetric Systems: Insights from Bilayer Transition Metal Dichalcogenides
• Orbital torques and orbital pumping in two-dimensional rare-earth dichalcogenides