Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond

Abstract

Large (> 100 mm${}^3$), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we examine a HPHT sample of good crystalline perfection, containing less than 1 ppb (part per billion carbon atoms) of boron impurity atoms in the {001} growth sector and only tens of ppb of nitrogen impurity atoms. It is shown that the boundaries between {111} and {113} growth sectors are decorated by negatively charged nitrogen vacancy centres (NV${}^{-}$): no decoration is observed at any other type of growth sector interface. This decoration can be used to calculated the relative {111} and {113} growth rates. The bulk (001) sector contains concentrations of luminescent point defects (excited with 488 and 532 nm wavelengths) below 10${}^{11}$ cm${}^{-3}$ (10${}^{-3}$ ppb). We observe the negatively charged silicon-vacancy (SiV${}^{-}$) defect in the bulk {111} sectors along with a zero phonon line emission associated with a nickel defect at 884 nm (1.40 eV). No preferential orientation is seen for either NV${}^{-}$ or SiV${}^{-}$ defects, but the nickel related defect is oriented with its trigonal axis along the <111> sector growth direction. Since the NV${}^{-}$ defect is expected to readily re-orientate at HPHT diamond growth temperatures, no preferential orientation is expected for this defect but the lack of preferential orientation of SiV${}^{-}$ in {111} sectors is not explained.

References in corpus (16)

• Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
• Magnetometry with nitrogen-vacancy defects in diamond
• Deterministic delivery of remote entanglement on a quantum network
• Electronic properties and metrology of the diamond NV- center under pressure
• Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
• Chemical vapour deposition synthetic diamond: materials, technology and applications
• Laser writing of coherent colour centres in diamond
• Electronic structure of the negatively-charged silicon-vacancy center in diamond
• Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces
• Production of oriented nitrogen-vacancy color centers in synthetic diamond
• Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
• Experimental open air quantum key distribution with a single photon source
• Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium
• Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond
• Three-dimensional solid-state qubit arrays with long-lived spin coherence
• Electron paramagnetic resonance of the ${\mathrm{N}}_2{\mathrm{V}}^{-}$ defect in ${}^{15}\mathrm{N}$-doped synthetic diamond

Cited by in corpus (1)

• Stability and electronic structure of NV centers at dislocation cores in diamond