Theoretical study of quantum emitters in two-dimensional silicon carbide monolayer

Abstract

The features of some potential single-photon sources in two-dimensional silicon carbide monolayers is studied via ab-initio calculation and group theory analysis. A few point defects in three charge states (negative, positive and neutral) are considered. By applying performance criteria, Stone-Wales defects without and with combination of antisite defects are studied in details. The formation energy calculations reveal that neutral and positive charge states of these defects are stable. We compute the zero-phonon-line energy, the Huang-Rhys (HR) factor and the photoluminescence spectrum for the available transitions in different charge states. The calculated HR values and the related Debye-Waller factors guarantee that the Stone-Wales defects have a high potential of performing as a promising single-photon emitter.

arXiv comment7 pages, 5 figures

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Cited by in corpus (4)

• Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations
• Defect-driven tunable electronic and optical properties of two-dimensional silicon carbide
• Vacancy-related color centers in twodimensional silicon carbide monolayers
• Characterization of Silicon Carbide Biphenylene Network through G0W0-BSE Calculations