Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe${}_2$

Abstract

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe${}_2$ intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V${}_W$ dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V${}_W$ dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V${}_W$ dopants.

12 pages, 4 figures