papers

Publications (31)

cond-mat.mtrl-sci2013

X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling

Samuel Tardif, Andrey Titov, Emmanuel Arras +10

X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of…

cond-mat.mtrl-sci2025

Room temperature magnetic vortices in the van der Waals magnet FeGeTe

Elias Sfeir, Carolin Schrader, Florentin Fabre +8

We investigate the effect of confinement on the magnetic state of a 12 nm-thick FeGeTe layer grown by molecular beam epitaxy. We use quantitative scanning NV magnetometry t…

cond-mat.mes-hall2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Debora Pierucci, Aymen Mahmoudi, Mathieu Silly +10

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we rep…

cond-mat.mtrl-sci2020

Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe

Pierre Mallet, Florian Chiapello, Hanako Okuno +3

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of m…

cond-mat.mtrl-sci2024

Two-dimensional to bulk crossover of the WSe electronic band structure

Patrick Le Fèvre, Raphaël Salazar, Matthieu Jamet +8

Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions…

cond-mat.mtrl-sci2026

A new method to probe conducting filaments in MoS-based memristors

Pierre Trousset, Lucie Le Van-Jodin, Bruno Reig +7

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS), are emerging as promising materials for next-generation electronic devices. Th…