HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equations method

Abstract

HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on three and two quantum wells, exhibit a peak gain exceeding 100 cm(-1) at 150 K. We analyze the temperature dependences of the peak gain and predict the maximum operation temperatures of 170 K and 225 K for three- and two-well designs, respectively. At high temperatures (T > 120 K), the better temperature performance of the two-well design is associated with a larger spatial overlap of the weakly localized lasing wavefunctions as well as a higher population inversion.

References in corpus (4)

• Thermoelectrically cooled THz quantum cascade laser operating up to 210 K
• Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
• Density matrix Monte Carlo modeling of quantum cascade lasers
• Landau level spectroscopy of valence bands in HgTe quantum wells: Effects of symmetry lowering

Cited by in corpus (3)

• Terahertz cyclotron emission from two-dimensional Dirac fermions
• Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes
• Hot phonon effects and suppressed Auger recombination on 3 $\mu$m room temperature lasing in HgTe-based multiple quantum well diodes