Reflectance of Silicon Photomultipliers in Linear Alkylbenzene

Abstract

Reflectance of silicon photomultipliers (SiPMs) is an important aspect to understand the large scale SiPM-based detector systems and evaluate the performance of SiPMs. We report the reflactance of two SiPMs, NUV-HD-lowCT and S14160-60-50HS manufactured by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) respectively, in linear alkylbenzene (LAB) and in air at visible wavelengths. Our results show that the reflectance of the FBK SiPM in air varies in the range of 14% to 23% , depending on wavelengths and angle of incidence, which is 2 time larger than that of the HPK device. This indicates that the two manufacturers are using different designs of anti-reflective coating on SiPMs' surfaces. The reflectance is reduced by about 10% when SiPMs are immersed in LAB, compared with that measured in air. The profiles of reflected light beams are also measured by a charge-coupled device (CCD) camera for the two SiPMs.

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• Neutrino Physics with JUNO
• DarkSide-20k: A 20 Tonne Two-Phase LAr TPC for Direct Dark Matter Detection at LNGS
• DARWIN: towards the ultimate dark matter detector
• JUNO Conceptual Design Report
• The Detector System of The Daya Bay Reactor Neutrino Experiment
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• nEXO Pre-Conceptual Design Report
• Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon

Cited by in corpus (2)

• A New Optical Model for Photomultiplier Tubes
• Development of a Cherenkov-Based Time-of-Flight Detector Using Silicon Photomultipliers