Hole spin-flip transitions in a self-assembled quantum dot

Abstract

In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture- and direct spin-phonon mechanisms giving rise to the transition rates. We show that the biaxial and shear strain constitute dominant spin-admixture coupling mechanisms. Then, we demonstrate that hole spin lifetime can be increased if a quantum dot is covered by a strain-reducing layer. Finally, we show that the spin relaxation can be described by an effective model.

arXiv comment8 pages, 4 figures

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• Optical Charge Injection and Full Coherent Control of Spin-Qubit in the Telecom C-band Emitting Quantum Dot
• Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy
• Tunneling-related electron spin relaxation in self-assembled quantum-dot molecules
• Phonon-assisted carrier tunneling in coupled quantum dot systems with hyperfine-induced spin flip