Role of thermal and photo annealing on nonlinear optical response of Ge30Se55Bi15 thin films
arXiv:2002.00505 · doi:10.1063/1.5132579
Abstract
In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the samples, i.e. as-prepared, thermal and photo annealed thin films exhibit reverse saturable absorption (RSA). The experimental results indicate that both thermal and photo annealing can be efficiently used to enhance the nonlinear absorption coefficient compared to as-prepared sample. We further demonstrate that beta value of thermally annealed and as-prepared samples increase significantly at higher intensities. On the contrary, beta for photo annealed sample does not exhibit appreciable changes against the intensity variation.
13 pages, 4 figures, 2 tables
References in corpus (5)
- Observation of Saturable and Reverse Saturable Absorption at Longitudinal Surface Plasmon Resonance in Gold Nanorods
- Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films
- Enhancement of Two photon absorption with Ni doping in the dilute magnetic Semiconductor ZnO Crystalline Nanorods
- Role of Ge:As ratio in controlling the light-induced response of a-GexAs35-xSe65 thin films
- Quantification of nonlinear absorption in ternary As-Sb-Se chalcogenide glasses