Theory of field-modulated spin-valley-orbital pseudospin physics
arXiv:2001.09255 · doi:10.1103/PhysRevResearch.2.013076
Abstract
Pioneering studies in transition metal dichalcogenides have demonstrated convincingly the co-existence of multiple angular momentum degrees of freedom -- of spin (1/2 ), valley ( or ), and atomic orbital () origins -- in the valence band with strong interlocking among them, which results in noise-resilient pseudospin states ideal for spintronic type applications. With field modulation a powerful, universal means in physics studies and applications, this work develops, from bare models in the context of complicated band structure, a general effective theory of field-modulated spin-valley-orbital pseudospin physics that is able to describe both intra- and inter- valley dynamics. Based on the theory, it predicts and discusses the linear response of a pseudospin to external fields of arbitrary orientations. Paradigm field configurations are identified for pseudospin control including pseudospin flipping. For a nontrivial example, it presents a spin-valley-orbital quantum computing proposal, where the theory is applied to address all-electrical, simultaneous control of , , and for qubit manipulation. It demonstrates the viability of such control with static field effects and an additional dynamic electric field. An optimized qubit manipulation time ~ O(ns) is given.
References in corpus (10)
- Valley polarization in MoS2 monolayers by optical pumping
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- The Valley Hall Effect in MoS2 Transistors
- Valley filter and valley valve in graphene
- Single-shot read-out of an individual electron spin in a quantum dot
- Detecting Topological Currents in Graphene Superlattices
- All-electric all-semiconductor spin field effect transistors
- Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
- Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
- Zero-field spin-splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures