Investigation of laser-induced-metal phase of ${\mathrm{MoTe}}_2$ and its contact property via scanning gate microscopy

Abstract

Although semiconductor to metal phase transformation of MoTe${}_2$ by high-density laser irradiation of more than 0.3 MW/cm${}^2$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe${}_2$. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe${}_2$/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe${}_2$ boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe${}_2$/LIM phase junction for both n- and p-type carriers.

18 pages, 4 figures, accepted for publication in Nanotechnology

References in corpus (3)

• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Cited by in corpus (3)

• Photo-induced Tellurium segregation in $\mathrm{MoT}{\mathrm{e}}_2$
• Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure
• Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy