UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films
arXiv:2001.03054 · doi:10.1002/pssa.200824175
Abstract
We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithog-raphy
4 pages, 2 figures