High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Abstract

Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI${}_3$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_g$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI${}_3$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.

19 pages, 5 figures

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Cited by in corpus (5)

• Pressure-induced huge increase of Curie temperature of the van der Waals ferromagnet VI3
• Magnetic anisotropy in van-der-Waals ferromagnet VI3
• Antiferromagnetic and Electric Polarized States in Two-Dimensional Janus Semiconductor Fe2Cl3I3
• Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets
• High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide V${}_2$Cr${}_2$I${}_9$