CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement

Abstract

In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.

Published in: IEEE Access (Early Access) https://ieeexplore.ieee.org/document/8936906

References in corpus (5)

• Non-Abelian Anyons and Topological Quantum Computation
• Superconducting Circuits and Quantum Information
• A cryogenic amplifier for fast real-time detection of single-electron tunneling
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Measuring the Entanglement between Double Quantum Dot Charge Qubits

Cited by in corpus (2)

• Paired electron motion in interacting chains of quantum dots
• Simulation Methodology for Electron Transfer in CMOS Quantum Dots