AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

Abstract

The direct-current (dc) ${\sigma }_{xx}^{dc}$ and alternating-current (ac) ${\sigma }_{xx}^{ac}={\sigma }_1-i{\sigma }_2$ conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of ${\sigma }_{xx}$ exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the ${\sigma }_1/{\sigma }_2$ ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.

arXiv comment6 pages, 6 figures

References in corpus (5)

• Phase Diagrams for the $\nu$ = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells
• High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies
• Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands
• Intersubband scattering in n-GaAs/AlGaAs wide quantum wells
• Contactless Measurement of AC Conductance in Quantum Hall Structures

Cited by in corpus (2)

• Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers
• Nonlinear AC and DC Conductivities in a Two-Subband n-GaAs/AlAs Heterostructure