Origin of the butterfly magnetoresistance in ZrSiS

Abstract

ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.

References in corpus (2)

• Topological nodal line semimetals
• Surface floating 2D bands in layered nonsymmorphic semimetals: ZrSiS and related compounds

Cited by in corpus (3)

• Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi
• Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling
• Magnetotransport studies of the Sb square-net compound LaAgSb${}_2$ under high pressure and rotating magnetic fields