Controlled DC Monitoring of a Superconducting Qubit

Abstract

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor (FET). Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the FET to the monitoring circuit allows the influence of weak-to-strong DC monitoring of a live qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.

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Cited by in corpus (14)

• Singlet-doublet transitions of a quantum dot Josephson junction detected in a transmon circuit
• A perspective on semiconductor-based superconducting qubits
• Suppressed Charge Dispersion via Resonant Tunneling in a Single-Channel Transmon
• Observation of vanishing charge dispersion of a nearly-open superconducting island
• Spectroscopy of spin-split Andreev levels in a quantum dot with superconducting leads
• Destructive Little-Parks Effect in a Full-Shell Nanowire-based Transmon
• Magnetic-Field-Compatible Superconducting Transmon Qubit
• Andreev Modes from Phase Winding in a Full-shell Nanowire-based Transmon
• Few-mode to mesoscopic junctions in gatemon qubits
• Effect of dilute impurities on short graphene Josephson junctions
• Dynamics of parafermionic states in transport measurements
• Integration of graphene-based superconducting quantum circuits in 3D cavity
• Radio-frequency characterization of a supercurrent transistor made from a carbon nanotube
• Local analysis of a single impurity on a graphene Josephson Junction