Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High- Vanadium Tetracyanoethylene Magnon Cavities
arXiv:1910.05325 · doi:10.1063/1.5131258
Abstract
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene () is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.
arXiv comment18 pages, 7 figures, submitted to APL Materials
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