activity
20182021
collaborators

6 papers

quant-ph2021

Opportunities for long-range magnon-mediated entanglement of spin qubits via on- and off-resonant coupling

Masaya Fukami, Denis R. Candido, David D. Awschalom +1

The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamon…

physics.optics2020

Impact of DC bias on Weak Optical-Field-Driven Electron Emission in Nano-Vacuum-Gap Detectors

Marco Turchetti, Mina R. Bionta, Yujia Yang +5

In this work, we investigate multiphoton and optical-field tunneling emission from metallic surfaces with nanoscale vacuum gaps. Using time-dependent Schrodinger equation (TDSE) si…

cond-mat.mes-hall2019

Spin-orbit coupling in wurtzite quantum wells

J. Y. Fu, P. H. Penteado, D. R. Candido +4

Effective spin-orbit (SO) Hamiltonians for conduction electrons in wurtzite heterostructures are lacking in the literature, in contrast to zincblende structures. Here we address th…

cond-mat.str-el2019

Corroborating the bulk-edge correspondence in weakly interacting 1D topological insulators

Antonio Zegarra, Denis R. Candido, J. Carlos Egues +1

We present a Green's function formalism to investigate the topological properties of weakly interacting one-dimensional topological insulators, including the bulk-edge corresponden…

cond-mat.mes-hall2018

Paradoxical extension of the edge states across the topological phase transition due to emergent approximate chiral symmetry in a quantum anomalous Hall system

Denis R. Candido, Maxim Kharitonov, J. Carlos Egues +1

We present a paradoxical finding that, in the vicinity of a topological phase transition in a quantum anomalous Hall system (Chern insulator), topology nearly always (except when t…

cond-mat.mes-hall2018

Blurring the boundaries between topological and non-topological phenomena in dots

Denis R. Candido, M. E. Flatté, J. Carlos Egues

We investigate the electronic and transport properties of topological and trivial InAsBi quantum dots (QDs). By considering the rapid band gap change within valence ban…