Vertical transport and tunnelling in rare-earth nitride heterostructures

Abstract

We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device structures that demand electron transport through interface layers, and grown REN/insulator/REN heterostructures that display tunnelling characteristics, an enormous 400% tunneling magnetoresistance and a hysteresis promising their exploitation in non-volatile magnetic random access memory.

arXiv comment5 pages, 6 figures

References in corpus (6)

• Ultra-Low-Power Superconductor Logic
• Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits
• A scalable control system for a superconducting adiabatic quantum optimization processor
• Rare-earth mononitrides
• Highly resistive epitaxial Mg-doped GdN thin films
• Ferromagnetic Josephson junctions for cryogenic memory