Electrical switching in a magnetically intercalated transition metal dichalcogenide

Abstract

Recent advances in tuning the correlated behavior of graphene and transition-metal dichalcogenides (TMDs) have opened a new frontier in the study of many-body physics in two dimensions and promise exciting possibilities for new quantum technologies. An emerging field where these materials have yet to make a deep impact is the study of antiferromagnetic (AFM) spintronics - a relatively new research direction that promises technologies that are insensitive to external magnetic fields, fast switching times, and reduced crosstalk. In this study we present measurements on the intercalated TMD Fe1/3NbS2 which exhibits antiferromagnetic ordering below 42K. We find that current densities on the order of 10^4 A/cm^2 can reorient the magnetic order, the response of which can be detected in the sample's resistance. This demonstrates that Fe1/3NbS2 can be used as an antiferromagnetic switch with electronic "write-in" and "read-out". This switching is found to be stable over time and remarkably robust to external magnetic fields. Fe1/3NbS2 is a rare example of an AFM system that exhibits fully electronic switching behavior in single crystal form, making it appealing for low-power, low-temperature memory storage applications. Moreover, Fe1/3NbS2 is part of a much larger family of magnetically intercalated TMDs, some of which may exhibit the switching behavior at higher temperatures and form a platform from which to build tunable AFM spintronic devices.

arXiv comment12 pages, 4 figures

References in corpus (14)

• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• Spin Transfer Torques
• Electrical switching of an antiferromagnet
• Room-temperature antiferromagnetic memory resistor
• Relativistic Neel-order fields induced by electrical current in antiferromagnets
• Ultrafast magnetization switching by spin-orbit torques
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Current induced electron spin polarization in strained semiconductors
• Antidamping torque-induced switching in biaxial antiferromagnetic insulators
• Spin transfer and current-induced switching in antiferromagnets
• Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
• Concepts of antiferromagnetic spintronics
• Phase diagram of the classical Heisenberg antiferromagnet on a triangular lattice in applied magnetic field

Cited by in corpus (35)

• Imaging the Néel vector switching in the monolayer antiferromagnet MnPSe${}_3$ with strain-controlled Ising order
• Observation of three-state nematicity in the triangular lattice antiferromagnet Fe${}_{1/3}$ NbS${}_2$
• Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co${}_{1/3}$NbS${}_2$
• Altermagnetism in the layered intercalated transition metal dichalcogenide CoNb${}_4$Se${}_8$
• Antiferromagnetic Switching Driven by the Collective Dynamics of a Coexisting Spin Glass
• Canted antiferromagnetic order in the monoaxial chiral magnets V${}_{1/3}$TaS${}_2$ and V${}_{1/3}$NbS${}_2$
• Antiferromagnetic metal phase in an electron-doped rare-earth nickelate
• Intrinsic spin Hall torque in a moire Chern magnet
• Majorana Bound States Induced by Antiferromagnetic Skyrmion Textures
• Half-magnetization plateau and the origin of threefold symmetry breaking in an electrically-switchable triangular antiferromagnet
• Composition dependence of bulk properties in the Co-intercalated transition-metal dichalcogenide Co${}_{1/3}$TaS${}_2$
• Origins of anisotropic transport in electrically-switchable antiferromagnet $\mathrm{F}{\mathrm{e}}_1/3Nb{\mathrm{S}}_2$
• Comparative Electronic Structures of the Chiral Helimagnets Cr1/3NbS2 and Cr1/3TaS2
• Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains
• Pseudospin-lattice coupling and electric control of the square-lattice iridate Sr2IrO4
• Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
• Kinetomagnetism of chirality and its applications
• Coupling between Antiferromagnetic and Spin Glass Orders in the Quasi-One-Dimensional Iron Telluride TaFe${}_{1+x}$Te${}_3$ ($x$=0.25)
• Disentangling Electronic, Lattice and Spin Dynamics in the Chiral Helimagnet Cr1/3NbS2
• Magnetic and Electronic Switch in Metal Intercalated Two-Dimensional GeP${}_3$
• Observation of spin splitting in the surface electronic structure of antiferromagnet NdBi
• Tunability of the magnetic properties in Ni intercalated transition metal dichalcogenide NbSe${}_2$
• Tunable bifurcation of magnetic anisotropy and bi-oriented antiferromagnetic order in kagome metal GdTi3Bi4
• Transport anomalies in the layered compound BaPt4Se6
• Magnetic impurities in a charge-ordered background
• Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide
• Superconducting Sn-Intercalated TaSe${}_2$: Structural Diversity Obscured by Routine Characterization Techniques
• Spin-Valley Locking in 2H-TaS2 and Its Co-Intercalated Counterpart: Roles of Surface Domains and Co Intercalation
• Magnetism in $M_{1/3}$NbS${}_2$ ($M$ = Fe, V, Mn): insight into intercalated transition-metal dichalcogenides using $\mu$SR
• Double-$Q$ chiral stripe order in the anomalous Hall antiferromagnet CoNb${}_3$S${}_6$
• Intercalation induced quasi-freestanding layer in TiSe${}_2$
• Measuring the Hall effect in hysteretic materials
• Emergent 3D Fermiology and Magnetism in an Intercalated Van der Waals System
• Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet
• Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field