Perforating freestanding molybdenum disulfide monolayers with highly charged ions

Abstract

Porous single layer molybdenum disulfide (MoS${}_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS${}_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.

arXiv comment22 pages, 4 figures

References in corpus (7)

• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Identification of single nucleotides in MoS2 nanopores
• Control of Radiation Damage in MoS2 by Graphene Encapsulation
• Electrochemical reaction in single layer MoS2: nanopores opened atom by atom
• A MoS2-based capacitive displacement sensor for DNA sequencing
• HICS: Highly charged ion collisions with surfaces

Cited by in corpus (4)

• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Velocity distributions of particles sputtered from supported 2D-MoS${}_2$ during highly charged ion irradiation
• Energy deposition and formation of nanostructures in the interaction of highly charged xenon ions with gold nanolayers
• Transition Metal Dichalcogenide MoS${}_2$: oxygen and fluorine functionalization for selective plasma processing