Voltage-induced high-speed DW motion in a synthetic antiferromagnet
arXiv:1906.04988 · doi:10.1088/1361-6463/ab3fc9
Abstract
Voltage-induced motion of a magnetic domain wall (DW) has potential in developing novel devices with ultralow dissipation. However, the speed for the voltage-induced DW motion (VIDWM) in a single ferromagnetic layer is usually very low. In this work, we proposed VIDWM with high speed in a synthetic antiferromaget (SAF). The velocity for the coupled DWs in the SAF is significantly higher than its counterpart in a single ferromagnetic layer. Strong interlayer antiferromagnetic exchange coupling plays a critical role for the high DW velocity since it inhibits the tilting of DW plane with strong Dzyaloshinskii-Moriya interaction. On the other hand, the Walker breakdown of DW motion is also inhibited due to the stabilization of moment orientation under a strong interlayer antiferromagnetic coupling. In theory, the voltage-induced gradient of magnetic anisotropy is proved to be equal to an effective magnetic field that drives DW.
arXiv comment9 pages, 5 figures
References in corpus (10)
- Current-driven dynamics of chiral ferromagnetic domain walls
- Dynamics of Dzyaloshinskii domain walls in ultrathin magnetic films
- Skyrmion confinement in ultrathin film nanostructures in the presence of Dzyaloshinskii-Moriya interaction
- Spin torque building blocks
- Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks
- Spin-Based Neuron Model with Domain Wall Magnets as Synapse
- Electric field-induced creation and directional motion of domain walls and skyrmion bubbles
- Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
- Giant modulation of the magnetic domain size induced by an electric field
- Readable Racetrack Memory via Ferromagnetically Coupled Chiral Domain Walls