Intrinsic persistent spin helix in two-dimensional group-IV monochalcogenide MX (M : Sn, Ge; X: S, Se, Te) monolayer

Abstract

Energy-saving spintronics are believed to be implementable on the systems hosting persistent spin helix (PSH) since they support an extraordinarily long spin lifetime of carriers. However, achieving the PSH requires a unidirectional spin configuration in the momentum space, which is practically non-trivial due to the stringent conditions for fine-tuning the Rashba and Dresselhaus spin-orbit couplings. Here, we predict that the PSH can be intrinsically achieved on a two-dimensional (2D) group-IV monochalcogenide M X monolayer, a new class of the noncentrosymmetric 2D materials having in-plane ferroelctricity. Due to the C2v point group symmetry in the MX monolayer, a unidirectional spin configuration is preserved in the out-of-plane direction and thus maintains the PSH that is similar to the [110] Dresselhaus model in the [110]-oriented quantum well. Our first-principle calculations on various MX (M : Sn, Ge; X: S, Se, Te) monolayers confirmed that such typical spin configuration is observed, in particular, at near the valence band maximum where a sizable spin splitting and a substantially small wavelength of the spin polarization are achieved. Importantly, we observe reversible out-of-plane spin orientation under opposite in-plane ferroelectric polarization, indicating that an electrically controllable PSH for spintronic applications is plausible.

arXiv comment6 Figures, submitted to PRB

References in corpus (25)

• New Perspectives for Rashba Spin-Orbit Coupling
• Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
• Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
• All-electric all-semiconductor spin field effect transistors
• Direct mapping of the formation of a persistent spin helix: Supplementary information
• Giant tunable Rashba spin splitting in two-dimensional BiSb monolayer and BiSb/AlN heterostructures
• Persistent Spin Textures in Semiconductor Nanostructures
• Persistent spin texture enforced by symmetry
• Polarization and valley switching in monolayer group-IV monochalcogenides
• Promising Ferroelectricity in 2D Group IV Tellurides: a First-Principles Study
• Direct determination of spin orbit interaction coefficients and realization of the persistent spin helix symmetry
• Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
• Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
• Strain-controlled spin splitting in the conduction band of monolayer WS2
• Suppressed decay of a laterally confined persistent spin helix
• Polarity tuning of spin-orbit-induced spin splitting in two-dimensional transition metal dichalcogenides semiconductors
• From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films
• Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe2
• Doping-induced persistent spin helix with large spin splitting in monolayer SnSe
• Persistent spin helix on a wurtzite ZnO(10-10) surface: First-principles density-functional study
• Strain-induced large spin splitting and persistent spin helix at LaAlO${}_3$/SrTiO${}_3$ interface
• Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'

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• Experimental formation of monolayer group-IV monochalcogenides
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• Spin-Neutral Tunneling Anomalous Hall Effect
• Origin of Rashba spin-splitting and strain tunability in ferroelectric bulk CsPbF${}_3$
• Reversible giant out-of-plane Rashba effect in two-dimensional Ga$XY$ ($X$= Se, Te; $Y$= Cl, Br, I) compounds for persistent spin helix
• Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides
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• Full-zone Persistent Spin Textures with Giant Spin Splitting in Two-dimensional Group IV-V Compounds
• Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus $X{A}_{2}Y$ ($A$= Si, Sn, Ge; $X,Y$= Sb, Bi) with surface imperfection
• Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure
• Strong anomalous proximity effect from spin-singlet superconductors
• Reversible canted persistent spin textures with large spin splitting in two-dimensional ferroelectric bilayer WTe${}_2$
• Proximity-induced spin-orbit coupling in phosphorene on a WSe${}_2$ monolayer
• Persistent Spin Textures in Nonpolar Chiral Systems
• (110) Facet of MgTe Zinc Blende Semiconductor: A Holy Grail for Modern Spintronics
• Magnetic switching of spin-scattering centers in Dresselhaus [110] circuits
• Investigating Quantum Spin-Textures Using Universal MJ Hamiltonians