Diode effect in the lateral spin valve

Abstract

We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.) demonstrate spin accumulation even at room temperatures due to large spin flip lengths (0.3--2.0 $\mu m$). The Hanle precession was observed in lateral spin valves based on such materials and two parallel magnetic electrodes. We provide theoretical estimations which show that the nonreciprocal effect in a configuration with non-parallel magnetic electrodes is of the same order of value as the effect that arise due to Hanle precession. This makes it possible to observe the nonreciprocal electron transport as a manifestation of the noncommutativity of spin-1/2 algebra for them in the proposed system. Such property of noncoplanar magnetic system has a potential of application in a noncoplanar type of spintronic devices.

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