Effect of synthesis conditions on the electrical resistivity of TiSe${}_2$

Abstract

Dilute impurities and growth conditions can drastically affect the transport properties of TiSe${}_2$, especially below the charge density wave transition. In this paper, we discuss the effects of cooling rate, annealing time and annealing temperature on the transport properties of TiSe${}_2$: slow cooling of polycrystalline TiSe${}_2$ post-synthesis drastically increases the low temperature resistivity, which is in contrast to the metallic behavior of single-crystalline TiSe${}_2$ due to charge doping from the residual iodine transport agent. A logarithmic increase of resistivity upon cooling and negative magnetoresistance with a sharp cusp around zero field are observed for the first time for the polycrystalline TiSe${}_2$ samples, pointing to weak-localization effects due to low dimensionality. Annealing at low temperatures has a similar, but less drastic effect. Furthermore, rapid quenching of the polycrystalline samples from high temperatures freezes in disorder, leading to a decrease in the low temperature resistivity.

arXiv comment8 pages, 6 figures

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Cited by in corpus (8)

• Fermi surface reconstruction and electron dynamics at the charge-density-wave transition in TiSe2
• Excitonic insulator emerging from semiconducting normal state in $1T$-TiSe${}_2$
• A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2
• Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2
• Symmetry-mode analysis for local structure investigations using pair distribution function data
• Evidence of anisotropic three-dimensional weak-localization in TiSe${}_2$ nanoflakes
• Melting point depression of charge density wave in 1T-TiSe${}_2$ due to size effects
• Metal-to-insulator transition in Pt-doped TiSe${}_2$ driven by emergent network of narrow transport channels