Intrinsic Insulating Ground State in Transition Metal Dichalcogenide TiSe2

Abstract

The transition metal dichalcogenide TiSe${}_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a new synthesis technique whereby samples were grown in a high pressure environment with up to 180~bar of argon gas. Above 100~K, properties are nearly unchanged from previous reports, but a hysteretic resistance region that begins around 80~K, accompanied by insulating low temperature behavior, is distinct from anything previously observed. An accompanying decrease in carrier concentration is seen in Hall effect measurements, and photoemission data show a removal of an electron pocket from the Fermi surface in an insulating sample. We conclude that high inert gas pressure synthesis accesses an underlying nonmetallic ground state in a material long speculated to be an excitonic insulator.

arXiv comment11 pages, 7 figures

References in corpus (8)

• Superconductivity in Cu_xTiSe_2
• Evidence for an excitonic insulator phase in 1T-TiSe${}_2$
• Signatures of exciton condensation in a transition metal dichalcogenide
• Exciton condensation driving the periodic lattice distortion of 1T-TiSe2
• Influence of domain walls in the incommensurate charge density wave state of Cu intercalated 1$T$-TiSe${}_2$
• Observation of a Charge Density Wave Incommensuration Near the Superconducting Dome in CuxTiSe2
• Doping nature of native defects in 1T-TiSe2
• Ambipolar surface state transport in non-metallic stoichiometric Bi${}_2$Se${}_3$ crystals

Cited by in corpus (14)

• Evidence for a Monolayer Excitonic Insulator
• Fermi surface reconstruction and electron dynamics at the charge-density-wave transition in TiSe2
• On the origin of the anomalous peak in the resistivity of TiSe${}_2$
• Effect of synthesis conditions on the electrical resistivity of TiSe${}_2$
• Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2
• Excitonic insulator emerging from semiconducting normal state in $1T$-TiSe${}_2$
• Charge Density Wave Activated Excitons in TiSe${}_2$-MoSe${}_2$ Heterostructures
• Lattice fluctuations, not excitonic correlations, mediated electronic localization in TiSe${}_2$
• Charge-Neutral Electronic Excitations in Quantum Insulators
• Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re${}_3$Ge${}_7$
• Crystal growth, characterization and electronic band structure of TiSeS
• In-plane anisotropy of charge density wave fluctuations in 1$T$-TiSe${}_2$
• Evidence of anisotropic three-dimensional weak-localization in TiSe${}_2$ nanoflakes
• Doping-induced nematic and stripe orders within the charge density wave state of TiSe${}_2$