Dark vertical conductance of cavity-embedded semiconductor heterostructures
arXiv:1903.11562 · doi:10.1088/1367-2630/ab41c2
Abstract
We present a linear-response nonlocal theory of the electronic conductance along the vertical (growth) direction of a semiconductor heterostructure embedded in a single-mode electromagnetic resonator in the absence of illumination. Our method readily applies to the general class of n-doped semiconductors with parabolic dispersion. The conductance depends on the ground-state properties and virtual collective polaritonic excitations that have been determined via a bosonic treatment in the dipole gauge. We show that, depending on the system parameters, the cavity vacuum effects can enhance or reduce significantly the dark vertical conductance with respect to the bare heterostructure.
10 pages, 6 figures
References in corpus (10)
- Ultra-Strong Light-Matter Coupling Regime with Polariton Dots
- Extraordinary exciton conductance induced by strong coupling
- Is there a no-go theorem for superradiant quantum phase transitions in cavity and circuit QED ?
- Cavity enhanced transport of excitons
- Magneto-transport controlled by Landau polariton states
- Breakdown of gauge invariance in ultrastrong-coupling cavity QED
- Intersubband Polaritons in the Electrical Dipole Gauge
- Vacuum-dressed cavity magnetotransport of a 2D electron gas
- Strong coupling of ionising transitions
- Ultrafast terahertz detectors based on three-dimensional meta-atoms
Cited by in corpus (5)
- Quantum electron transport controlled by cavity vacuum fields
- Resonant Tunneling Diodes Strongly Coupled to the Cavity Field
- Cavity-mediated electron hopping in disordered quantum Hall systems
- Localization and spectrum of quasiparticles in a disordered fermionic Dicke model
- Direct polariton-to-electron tunneling in quantum cascade detectors operating in the strong light-matter coupling regime