Resonant Tunneling Diodes Strongly Coupled to the Cavity Field
arXiv:2004.04810 · doi:10.1063/5.0007118
Abstract
We demonstrate Resonant Tunneling Diodes, embedded in double metal cavities, strongly coupled to the cavity field, while maintaining their electronic properties. We measure the polariton dispersion and find a relative vacuum Rabi splitting of 16%, which explicitly qualifies for the strong-coupling regime. Additionally we show that electronic transport has a significant influence on the polaritons by modulating the coupling strength. The merge between electronic transport and polaritonic physics in our devices opens up a new aspect of cavity quantum electro-dynamics and integrated photonics.
References in corpus (6)
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Cited by in corpus (5)
- Quantum electron transport controlled by cavity vacuum fields
- Unified description of saturation and bistability of intersubband transitions in the weak and strong light-matter coupling regimes
- Resonant tunneling diodes in semiconductor microcavities: modeling polaritonic features in the THz displacement current
- One-dimensional electron localization in semiconductors coupled to electromagnetic cavities
- An effective density matrix approach for intersubband plasmons coupled to a cavity field: electrical extraction/injection of intersubband polaritons