Velocity Dependent Dark Matter Interactions in Single-Electron Resolution Semiconductor Detectors with Directional Sensitivity

Abstract

We investigate the velocity and recoil momentum dependence of dark matter interactions with ordinary matter. In particular we focus on the single-electron resolution semiconductor detectors, which allow experimental assessment of sub-GeV dark matter masses. We find that, within a specific mass range depending on the detector material, the dark matter interactions result in a signal characterized by daily modulation. Furthermore, we find that the detailed structure of this modulation is sensitive to the velocity and momentum dependence of dark matter interactions. We identify the optimal mass range for the prevalence of these effects.

15 pages, 11 figures

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• Describing Migdal effects in diamond crystal with atom-centered localized Wannier functions
• Directional detection of dark matter with anisotropic response functions
• Phonon-mediated Migdal effect in semiconductor detectors
• Energy loss in low energy nuclear recoils in dark matter detector materials
• Solar neutrinos and dark matter detection with diurnal modulation
• In-medium screening effects for the Galactic halo and solar-reflected dark matter detection in semiconductor targets
• Impact of uncertainties in the halo velocity profile on direct detection of sub-GeV dark matter
• Defect Formation in NaI Crystals: A Novel Pathway to Dark Matter Detection
• Spontaneous damage annealing reactions as a possible source of low energy excess in semiconductor detectors