Boron-10 conversion layer for ultra-cold neutron detection

Abstract

We report on the development of a 10B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.

arXiv comment12 pages

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Cited by in corpus (2)

• Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices
• Spatial resolution determination of a position sensitive ultra-cold neutron detector