Thick GaN film stress-induced self-separation

Abstract

Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced the binding energy between the GaN film and the substrate. Wafer-scale self-separation of thick GaN films has been demonstrated.

Published in Proceedings of the 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)

References in corpus (3)

• Nature of V-Shaped Defects in GaN
• Two modes of HVPE growth of GaN and related macrodefects
• Thick GaN film stress-induced self-separation

Cited by in corpus (1)

• Thick GaN film stress-induced self-separation