Possible pressure-induced topological quantum phase transition in the nodal line semimetal ZrSiS

Abstract

ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of linear dispersion of up to 2 eV. We have carried out a series of high pressure electrical resistivity measurements on single crystals of ZrSiS. Shubnikov-de Haas measurements show two distinct oscillation frequencies. For the smaller orbit, we observe a change in the phase of 0.5, which occurs between 0.16 - 0.5 GPa. This change in phase is accompanied by an abrupt decrease of the cross-sectional area of this Fermi surface. We attribute this change in phase to a possible topological quantum phase transition. The phase of the larger orbit exhibits a Berry phase of pi and remains roughly constant up to 2.3 GPa. Resistivity measurements to higher pressures show no evidence for pressure-induced superconductivity to at least 20 GPa.

5 pages, 3 figures

References in corpus (2)

• Weyl semimetals from noncentrosymmetric topological insulators
• Pressure-induced topological phase transition in LaSb: First-principles study

Cited by in corpus (6)

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• Evolution of Electronic and Magnetic Properties in Topological Semimetal SmSbxTe2-x
• Pressure-induced excitations in the out-of-plane optical response of the nodal-line semimetal ZrSiS
• Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS