Influence of annealing on the electrical resistance of YBCO single crystals

Abstract

The effect of annealing on the basal-plane electrical resistivity of the YBa${}_2$Cu${}_3$O${}_{7-\delta }$ single crystals is studied in a broad range of oxygen contents. Within the framework of s-d scattering of electrons by phonons, an increase in the oxygen deficit index, $\delta$, leads to a significant increase in the Debye temperature, $\theta$, which is associated with the isotropization of the phonon spectrum as the concentration of oxygen vacancies increases. Near the optimal doping, the role of the paraconductivity becomes crucial, whereas its contribution decreases with increasing $\delta$. At large values of $\delta$ some deviations from the s-d model of electron scattering by phonons are observed at room temperature, while no paraproductivity is observed. In the superconducting transition region, a 2D-3D crossover is observed, which shifts in the direction of $T_c$ with increasing $\delta$. The estimate for the transverse coherence length is about $1$\,Å.

arXiv comment5 pages, 5 figures

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