Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa$_2$Cu$_3$O$_{7-δ}$ single crystals

G. Ya. Khadzhai; R. V. Vovk; N. R. Vovk; S. N. Kamchatnaya; O. V. Dobrovolskiy

doi:10.1016/j.physc.2017.11.015

paper

Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ single crystals

arXiv:1901.06171 · doi:10.1016/j.physc.2017.11.015

Abstract

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

5 pages, 5 figures

Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2​Cu3​O7−δ​ single crystals

Abstract

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Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa $_{2}$ Cu $_{3}$ O $_{7 - δ}$ single crystals