Phenomenal magneto-elastoresistance of WTe${}_2$: strain engineering of electronic and quantum transport properties

Abstract

Elastoresistance describes the relative change of a material's resistance when strained. It has two major contributions: strain induced geometric and electronic changes. If the geometric factor dominates, like in ordinary metals such as copper, the elastoresistance is positive and rather small, i.e. typically of order 1. In a few materials, however, changes in electronic structure dominate, which gives rise to larger and even negative values, such as (-11) for Bi. Here, we report that the transition metal dichalcogenide (TMDC) WTe${}_2$ is a member of the second group, exhibiting a large and non-monotonic elastoresistance that is about (-20) near 100 K and changes sign at low temperatures. We discover that an applied magnetic field has a dramatic effect on the elastoresistance in WTe${}_2$: in the quantum regime at low temperatures, it leads to quantum oscillations of the elastoresistance, that ranges between (-80) to 120 within a field range of only half a Tesla. In the semiclassical regime at intermediate temperatures, we find that the elastoresistance rapidly increases and changes sign in a magnetic field. We provide a semi-quantitative understanding of our experimental results using a combination of first-principle and analytical low-energy model calculations. Understanding bulk properties of TMDCs under uniaxial strain is an important stepping stone toward strain engineering of 2D TMDCs.

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Cited by in corpus (13)

• Squeezed metallic droplet with tunable Kubo gap and charge injection in transition metal dichalcogenides
• Hydrostatic and uniaxial pressure tuning of iron-based superconductors: Insights into superconductivity, magnetism, nematicity and collapsed tetragonal transitions
• Effect of uniaxial stress on the electronic band structure of NbP
• Dominant in-plane symmetric elastoresistance in CsFe2As2
• Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride
• Fermi surface and nested magnetic breakdown in WTe2
• Continuously tunable uniaxial strain control of van der Waals heterostructure devices
• On the effects of strain, defects, and interactions on the topological properties of HfTe5
• Measurements of elastoresistance under pressure by combining in-situ tunable quasi-uniaxial stress with hydrostatic pressure
• Uniaxial stress effect on the electronic structure of quantum materials
• Effects of strain-tunable valleys on charge transport in bismuth
• Electronic band structure from quasiparticle interference and Landau quantization in WTe${}_2$
• Multiband effect in elastoresistance of Fe(Se,Te)