Experimental evidence of monolayer arsenene: An exotic two-dimensional semiconducting material

Abstract

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional materials. Theoretical investigations predict high electron mobility, large band gaps, band gap tuning by strain, formation of topological phases, quantum spin Hall effect at room temperature, and superconductivity amongst others. Here, we report a successful formation of freestanding like monolayer arsenene on Ag(111). This was concluded from our experimental atomic and electronic structure data by comparing to results of our theoretical calculations. Arsenene forms a buckled honeycomb layer on Ag(111) with a lattice constant of 3.6 Å showing an indirect band gap of about 1.4 eV as deduced from the position of the Fermi level pinning.

References in corpus (12)

• The electronic properties of graphene
• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
• Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
• Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Two Dimensional Allotropes of Arsenene with Wide Range of High and Anisotropic Carrier Mobility
• Tunable Quantum Spin Hall Effect via Strain in two-Dimensional Arsenene Monolayer
• Superconductivity in electron-doped arsenene
• Tunable electronic and magneto-optical properties of monolayer arsenene from GW approximation to large-scale tight-binding simulations

Cited by in corpus (8)

• Second Order Topological Insulator State in Hexagonal Lattices and its Abundant Material Candidates
• Phononic Stiefel-Whitney topology with corner vibrational modes in two-dimensional Xenes and ligand-functionalized derivatives
• Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors
• Mono-elemental saturable absorber in mode-locked fiber laser: A review
• Database Construction for Two-Dimensional Material-Substrate Interfaces
• Uncovering the Structural Evolution Arsenene on SiC Substrate
• One-dimensional electronic structure of phosphorene chains
• Strain-controlled thermoelectric properties of phosphorene hetero-bilayers