Semimetal-to-semiconductor transition and charge-density-wave melting in -TiSeS single crystals
arXiv:1812.02047 · doi:10.1103/PhysRevB.99.155103
Abstract
The transition metal dichalcogenide -TiSe is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature TK. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate -TiSeS single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to . The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole (-) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and . Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of =0.9 0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the -dependence of the - band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the - band overlap for the CDW instability.
arXiv comment7 pages, 6 figures
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- Structurally assisted melting of excitonic correlations in 1T-TiSe2
- Electronic structure of TiSe from a quasi-self-consistent GW approach
- Phase Separation in the Vicinity of Fermi Surface Hot Spots
- Ultrafast creation of a light induced semimetallic state in strongly excited 1T-TiSe
- Trigonal-to-monoclinic structural transition in TiSe due to a combined condensation of and phonon instabilities
- Crystal growth, characterization and electronic band structure of TiSeS
- Doping-induced nematic and stripe orders within the charge density wave state of TiSe
- Metal-to-insulator transition in Pt-doped TiSe driven by emergent network of narrow transport channels