Ni-based transition-metal trichalcogenide monolayer: a strongly correlated quadruple-layer graphene
arXiv:1811.02333 · doi:10.1103/PhysRevB.100.165405
Abstract
We investigate the electronic physics of layered Ni-based trichalcogenide NiPX (X=S, Se), a member of transition-metal trichalcogenides (TMTs) with the chemical formula, ABX. These Ni-based TMTs distinguish themselves from other TMTs as their low energy electronic physics can be effectively described by the two d-orbitals. The major band kinematics is characterized by the unusal long-range effective hopping between two third nearest-neighbor (TNN) Ni sites in the two-dimensional Ni honeycomb lattice so that the Ni lattice can be equivalently viewed as four weakly coupled honeycomb sublattices. Within each sublattice, the electronic physics is described by a strongly correlated two-orbital graphene-type model that results in an antiferromagnetic (AFM) ground state near half filling. We show that the low energy physics in a paramagnetic state is determined by the eight Dirac cones which locate at , , and points in the first Brillouin zone with a strong AFM fluctuation between two and Dirac cones and carrier doping can sufficiently suppress the long-range AFM order and allow other competing orders, such as superconductivity, to emerge. The material can be an ideal system to study many exotic phenomena emerged from strong electron-electron correlation, including a potential superconducting state at high temperature.
arXiv comment10 pages
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