Electrical plasmon injection in double-layer graphene heterostructures
arXiv:1811.00460 · doi:10.1103/PhysRevB.100.125434
Abstract
It is by now well established that high-quality graphene enables a gate-tunable low-loss plasmonic platform for the efficient confinement, enhancement, and manipulation of optical fields spanning a broad range of frequencies, from the mid infrared to the Terahertz domain. While all-electrical detection of graphene plasmons has been demonstrated, electrical plasmon injection (EPI), which is crucial to operate nanoplasmonic devices without the encumbrance of a far-field optical apparatus, remains elusive. In this work, we present a theory of EPI in double-layer graphene, where a vertical tunnel current excites acoustic and optical plasmon modes. We first calculate the power delivered by the applied inter-layer voltage bias into these collective modes. We then show that this system works also as a spectrally-resolved molecular sensor.
arXiv comment10 pages, 6 figures
References in corpus (19)
- Van der Waals heterostructures
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Polaritons in layered 2D materials
- Electron-Electron Interactions in Graphene: Current Status and Perspectives
- Sub-diffractional, volume-confined polaritons in a natural hyperbolic material: hexagonal boron nitride
- Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging
- Subdiffractional focusing and guiding of polaritonic rays in a natural hyperbolic material
- Ultra-low-loss Polaritons in Isotopically Pure Materials: A New Approach
- Ultra-confined acoustic THz graphene plasmons revealed by photocurrent nanoscopy
- Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
- Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
- Infrared Reflectance Spectrum of BN Calculated from First Principles
- Double-layer graphene and topological insulator thin-film plasmons
- Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
- Emission and amplification of surface plasmons in resonant - tunneling van der Waals heterostructures
- Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain
- Accessing phonon polaritons in hyperbolic crystals by ARPES
- Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation
- Plasmon-assisted resonant tunneling in graphene-based heterostructures
Cited by in corpus (7)
- Far-field Excitation of Single Graphene Plasmon Cavities with Ultra-compressed Mode-volumes
- Quantum Nanophotonics in Two-Dimensional Materials
- Impact of structural defects on the performance of graphene plasmon-based molecular sensors
- Microscopic theory of plasmon-enabled resonant terahertz detection in bilayer graphene
- Dipolar optical plasmon in thin-film Weyl semimetals
- Tunable plasmon modes and topological transitions in single- and bilayer semi-Dirac materials
- Dirac's spectrum from Newton laws in graphene