Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure
arXiv:1810.12516 · doi:10.1021/acs.nanolett.9b01345
Abstract
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects.
arXiv comment17 pages, 5 figures
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Cited by in corpus (3)
- Hot-carrier optoelectronic devices based on semiconductor nanowires
- Theory of Non-equilibrium "Hot" Carriers in Direct Band-gap Semiconductors Under Continuous Illumination
- Revealing Charge Carrier Dynamics and Transport in Te-Doped GaAsSb and GaAsSbN Nanowires by Correlating Ultrafast Terahertz Spectroscopy and Optoelectronic Characterization