Silicene Like Domains on IrSi3 Crystallites
arXiv:1810.12373 · doi:10.1021/acs.jpcc.9b00550
Abstract
Recently, silicene, the graphene equivalent of silicon, has attracted a lot of attention due to its compatibility with Si-based electronics. So far, silicene has been epitaxy grown on various crystalline surfaces such as Ag(110), Ag(111), Ir(111), ZrB2(0001) and Au(110) substrates. Here, we present a new method to grow silicene via high temperature surface reconstruction of hexagonal IrSi3 nanocrystals. The h-IrSi3 nanocrystals are formed by annealing thin Ir layers on Si(111) surface. A detailed analysis of the STM images shows the formation of silicene like domains on the surface of some of the IrSi3 crystallites. We studied both morphology and electronic properties of these domains by using both scanning tunneling microscopy/spectroscopy and first-principles calculation methods.
References in corpus (11)
- The electronic properties of graphene
- Two and one-dimensional honeycomb structures of silicon and germanium
- Quantum Spin Hall Effect in Silicene
- Evidence of silicene in honeycomb structures of silicon on Ag(111)
- Electronic structure of silicon-based nanostructures
- Evidence for Dirac Fermions in a honeycomb lattice based on silicon
- Silicon and III-V compound nanotubes: structural and electronic properties
- Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene
- Germanene termination of GePt crystals on Ge(110)
- Unveiling the Penta-Silicene nature of perfectly aligned single and double strand Si-nanoribbons on Ag(110)
- Direct Evidence of Interaction-Induced Dirac Cones in Monolayer Silicene/Ag(111) System